Part Number

EPC2025ENGR

Manufacturer

Description
TRANS GAN 300V 4A BUMPED DIE
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of EPC2025ENGR
PackagingTray
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureStandard
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs150 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) @ Vgs1.85nC @ 5V
Input Capacitance (Ciss) @ Vds194pF @ 240V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie Outline (12-Solder Bar)
Other Names917-EPC2025ENGR
EPC2025ENGRC
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